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| esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 1/54 flash 4 gbit (512m x 8 / 256m x 16) 1.8v nand flash memory features ? voltage supply: 1.8v (1.7v ~ 1.95v) ? organization x8: - memory cell array: (512m + 8m) x 8bit - data register: (2k + 64) x 8bit x16: - memory cell array: (256m + 4m) x 16bit - data register: (1k + 32) x 16bit ? automatic program and erase x8: - page program: (2k + 64) byte - block erase: (128k + 4k) byte x16: - page program: (1k + 32) word - block erase: (64k + 2k) word ? page read operation - page size: (2k + 64) byte (x8) page size: (1k + 32) word (x16) - random read: 25us (max.) - serial access: 45ns (min.) ? memory cell: 1b it/memory cell ? fast write cycle time - program time: 350us (typ.) - block erase time: 3.5ms (typ.) ? command/address/data multiplexed i/o port ? hardware data protection - program/erase lockout during power transitions ? reliable cmos floating gate technology - ecc requirement: x8 - 4bit/512byte x16 - 4bit/256word - endurance: 100k program/erase cycles - data retention: 10 years ? command register operation ? automatic page 0 read at power-up option - boot from nand support - automatic memo ry download ? nop: 4 cycles ? cache program/read operation ? copy-back operation ? two-plane operation ? edo mode ? bad-block-protect ordering information product id speed package comments x8: F59D4G81A -45tg 45 ns 48 pin tsopi pb-free x16: f59d4g161a -45tg 45 ns 48 pin tsopi pb-free general description the device is a 512mx8bit with spare 16mx8bit capacity (or 256mx16bit with spare 8mx16bit ca pacity). the device is offered in 1.8v v cc power supply. its nand cell provides the most cost-effective solution for the solid state mass storage market. the memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. the device contains 4096 blocks, composed by 64 pages consisting in two nand structures of 32 series connected flash cells. a program operation allows to write the 1056-word page in typical 350us and an erase operation can be performed in typical 3.5ms on a 128k-byte for x8 device block (or 64k-word for x16 device block). data in the page mode can be read out at 45ns cycle time per word. the i/o pins serve as the ports for address and command inputs as well as data input/output. the copy back function allows the optimization of defe ctive blocks management: when a page program operation fails the data can be directly programmed in another page inside the same array section without the time consuming serial data insertion phase. the cache program feature allows th e data insertion in the cache register while the data register is copied into the flash array. this pipelined program operation improves the program throughput when long files are written inside the memory. a cache read feature is also implem ented. this feature allows to dramatically improving the r ead throughput when consecutive pages have to be streamed out. this device includes extra feature: automatic read at power up.
esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 2/54 pin configuration (x8) (top view) (tsopi 48l, 12mm x 20mm body, 0.5mm pin pitch) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 nc nc nc nc nc nc r/b re ce nc nc v cc v ss nc nc cle ale we wp nc nc nc nc nc 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 nc nc nc nc i/o7 i/o6 i/o5 i/o4 nc nc nc v cc v ss nc nc nc i/o3 i/o2 i/o1 i/o0 nc nc nc nc pin configuration (x16) (top view) (tsopi 48l, 12mm x 20mm body, 0.5mm pin pitch) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 nc nc nc nc nc nc r/b re ce nc nc v cc v ss nc nc cle ale we wp nc nc nc nc nc 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 v ss i/o15 i/o7 i/o14 i/o6 i/o13 i/o5 i/o12 i/o4 nc nc v cc nc nc nc i/o11 i/o3 i/o10 i/o2 i/o9 i/o1 i/o8 i/o0 v ss esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 3/54 pin description symbol pin name functions i/o0~i/o7 (x8) i/o0~i/o15 (x16) data inputs / outputs the i/o pins are used to input comma nd, address and data, and to output data during read operations. the i/o pins float to hi-z when the chip is deselected or when the outputs are disabled. cle command latch enable the cle input controls the activating path for commands sent to the internal command register. commands are latched into the command register through the i/o ports on the rising edge of the we signal with cle high. ale address latch enable the ale input controls the activating pat h for addresses sent to the internal address registers. addresses are latched into the address register through the i/o ports on the rising edge of we with ale high. ce chip enable the ce input is the device selection cont rol. when the device is in the busy state, ce high is ignored, and the device does not return to standby mode in program or erase operation. regarding ce control during read operation, refer to ?page read? section of device operation. re read enable the re input is the serial data-out control, and when it is active low, it drives the data onto the i/o bus. data is valid t rea after the falling edge of re which also increments the internal column address counter by one. we write enable the we input controls writes to the i/o port. commands, address and data are latched on the rising edge of the we pulse. wp write protect the wp pin provides inadvertent progr am/erase protection during power transitions. the internal high volt age generator is reset when the wp pin is active low. r / b ready / busy output the r/ b output indicates the status of t he device operation. when low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. it is an open drain output and does not float to hi-z condition when the chip is deselected or when outputs are disabled. v cc power v cc is the power supply for device. v ss ground nc no connection lead is not internally connected. note: connect all v cc and v ss pins of each device to common powe r supply outputs. do not leave v cc or v ss disconnected. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 4/54 block diagram (x8) array organization (x8) array address (x8) i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 address 1st cycle a0 a1 a2 a3 a4 a5 a6 a7 column address 2nd cycle a8 a9 a10 a11 l* l* l* l* column address 3rd cycle a12 a13 a14 a15 a16 a17 a18 a19 row address 4th cycle a20 a21 a22 a23 a24 a25 a26 a27 row address 5th cycle a28 a29 l* l* l* l* l* l* row address note: column address: starting address of the register. * l must be set to ?low?. * the device ignores any additional input of address cycles than required. a18 is for plane address setting. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 5/54 block diagram (x16) array organization (x16) array address (x16) i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o8~i/o15 address 1st cycle a0 a1 a2 a3 a4 a5 a6 a7 l* column address 2nd cycle a8 a9 a10 l* l* l* l* l* l* column address 3rd cycle a11 a12 a13 a14 a15 a16 a17 a18 l* row address 4th cycle a19 a20 a21 a22 a23 a24 a25 a26 l* row address 5th cycle a27 a28 l* l* l* l* l* l* l* row address note: column address: starting address of the register. * l must be set to ?low?. * the device ignores any additional input of address cycles than required. a17 is for plane address setting. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 6/54 product introduction the device is a 4,224mbit memory organized as 64k rows (pages) by 2,112x8 columns. spare 64x8 columns are located from column address of 2,048~2,111. a 2,112-byte data register is connected to memory cell a rrays accommodating data transfer between the i /o buffers and memory during page read and page program operations. the program and read operations are executed on a page basis, while the erase operation is executed on a block basis. the memory array consists of 4,096 separately erasable 128k-byte blocks . it indicates that the bit-by-bit erase op eration is prohibit ed on the device. the device has addresses multiplexed into 8 or 16 i/os . this sc heme dramatically reduces pin c ounts and allows system upgrades to future densities by maintaini ng consistency in system board design. command, addre ss and data are all written through i/o's by bringing we to low while ce is low. those are latched on the rising edge of we . command latch enable (cle) and address latch enable (ale) are used to multiplex command and address respectively, via the i/o pins. some commands require one bus cycl e. for example, reset command, status read command, etc require just one cycle bus. some other commands, like page read and block erase and page program, require two cycles: one cy cle for setup and the other cycle for execution. in addition to the enhanced architecture an d interface, the device incorporates copy -back program feature from one page to anot her page without need for transporting the data to and from the external buffer memory. command set function 1st cycle 2nd cycle acceptable command during busy read 00h 30h read for copy back 00h 35h read id 90h - reset ffh - o page program 80h 10h copy-back program 85h 10h block erase 60h d0h random data input (1) 85h - random data output (1) 05h e0h read status 70h - o read status 2 f1h - o two-plane read (3) 60h-60h 30h two-plane read for copy-back 60h-60h 35h two-plane random data output (1)(3) 00h-05h e0h two-plane page program (2) 80h-11h 81h-10h two-plane copy-back program (2) 85h-11h 81h-10h two-plane block erase 60h-60h d0h cache program 80h 15h cache read 31h - read start for last page cache read 3fh - two-plane cache read (3) 60h-60h 33h two-plane cache program (2) 80h-11h 81h-15h note: 1. random data input/output can be executed in a page. 2. any command between 11h and 80h/81h/85h is prohibited except 70h/f1h and ffh. 3. two-plane random data output must be used after two- plane read operation or two-plane cache read operation. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 7/54 absolute maximum ratings parameter symbol rating unit v cc -0.6 to +2.54 v in -0.6 to +2.54 voltage on any pin relative to v ss v i/o -0.6 to v cc + 0.3 (< 2.54v) v temperature under bias t bias -40 to +125 storage temperature t stg -65 to +150 short circuit current i os 5 ma note: permanent device damage may occur if absolute maximum rating s are exceeded. functional operation should be restricted to the conditions as detailed in the operatio nal sections of this data sheet. exposure to absolute maximum rating conditions for e xtended periods may affect reliability. recommended operating conditions (voltage reference to gnd, t a = 0 to 70 ) parameter symbol min. typ. max. unit supply voltage v cc 1.7 1.8 1.95 v supply voltage v ss 0 0 0 v dc and operation characteristics (recommended operating conditions otherwise noted) parameter symbol test conditions min. typ. max. unit page read with serial access i cc1 t rc =45ns, ce =v il , i out =0ma - 15 20 program i cc2 - - 15 20 operating current erase i cc3 - - 15 20 ma stand-by current (ttl) i sb1 ce =v ih , wp =0v/v cc - - 1 ma stand-by current (cmos) i sb2 ce = v cc -0.2, wp =0v/ v cc - 10 50 ua input leakage current i li v in =0 to v cc (max) - - 10 ua output leakage current i lo v out =0 to v cc (max) - - 10 ua input high voltage v ih (1) - 0.8 x v cc - v cc + 0.3 v input low voltage, all inputs v il (1) - -0.3 - 0.2 x v cc v output high voltage level v oh i oh =-100ua v cc - 0.1 - - v output low voltage level v ol i ol =+100ua - - 0.1 v output low current (r/ b ) i ol (r / b ) v ol =0.2v 3 4 - ma note: 1. v il can undershoot to -0.4v and v ih can overshoot to v cc + 0.4v for durations of 20 ns or less. 2. typical value are measured at v cc =1.8v, t a =25 . not 100% tested. valid block symbol min. typ. max. unit n vb 4,016 - 4,096 block note: 1. the device may include initial invalid blocks when first ship ped. additional invalid blocks may develop while being used. th e number of valid blocks is presented with both cases of invalid blocks considered. invalid blocks are defined as blocks that con tain one or more bad bits which cause status failure during program and erase operation. do not erase or program factory-marked bad blocks. refer to the attached te chnical notes for appropriate management of initial invalid blocks. 2. the 1st block, which is placed on 00h block address, is guaranteed to be a valid block at the time of shipment. 3. the number of valid block is on the basis of single plane operations, and this may be decreased with two plane operations. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 8/54 ac test condition (t a = 0 to 70 , v cc =1.8v~1.95v, unless otherwise noted) parameter condition input pulse levels 0v to v cc input rise and fall times 5 ns input and output timing levels v cc /2 output load 1 ttl gate and c l =30pf capacitance (t a =25 , v cc =1.8v, f=1.0mhz) item symbol test condition min. max. unit input / output capacitance c i/o v il = 0v - 10 pf input capacitance c in v in = 0v - 10 pf note: capacitance is periodically sampled and not 100% tested. mode selection cle ale ce we re wp mode h l l h x command input l h l h x read mode address input (5 clock) h l l h h command input l h l h h write mode address input (5 clock) l l l h h data input l l l h x data output x x x x h x during read (busy) x x x x x h during program (busy) x x x x x h during erase (busy) x x (1) x x x l write protect x x h x x 0v/v cc (2) stand-by note: 1. x can be v il or v ih . 2. wp should be biased to cmos hi gh or cmos low for standby. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 9/54 program / erase characteristics parameter symbol min. typ. max. unit average program time t prog - 350 750 us dummy busy time for cache operation t cbsy - 3 700 us number of partial program cycles in the same page n op - - 4 cycle block erase time t bers - 3.5 10 ms dummy busy time for two-plane page program t dbsy 0.5 1 us note: 1. typical program time is defined as the time within whic h more than 50% of the whole pag es are programmed at 1.8v v cc and 25 temperature. 2. t prog is the average program time of all pages. users should be noted that the program time variation from page to page is possible. 3. t cbsy max. time depends on timing between internal program completion and data-in. ac timing characteristics for co mmand / address / data input parameter symbol min. max. unit cle setup time t cls (1) 25 - ns cle hold time t clh 10 - ns ce setup time t cs (1) 35 - ns ce hold time t ch 10 - ns we pulse width t wp 25 - ns ale setup time t als (1) 25 - ns ale hold time t alh 10 - ns data setup time t ds (1) 20 - ns data hold time t dh 10 - ns write cycle time t wc 45 - ns we high hold time t wh 15 - ns address to data loading time t adl (2) 100 (2) - ns note: 1. the transition of the corresponding co ntrol pins must occur only once while we is held low. 2. t adl is the time from the we rising edge of final address cycle to the we rising edge of first data cycle. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 10/54 ac characteristics for operation parameter symbol min. max. unit data transfer from cell to register t r - 25 us ale to re delay t ar 10 - ns cle to re delay t clr 10 - ns ready to re low t rr 20 - ns re pulse width t rp 25 - ns we high to busy t wb - 100 ns wp low to we low (disable mode) wp high to we low (enable mode) t ww 100 - ns read cycle time t rc 45 - ns re access time t rea - 30 ns ce access time t cea - 45 ns re high to output hi-z t rhz - 100 ns ce high to output hi-z t chz - 30 ns ce high to ale or cle don?t care t csd 0 - ns re high to output hold t rhoh 15 - ns re low to output hold t rloh 5 - ns ce high to output hold t coh 15 - ns re high hold time t reh 15 - ns output hi-z to re low t ir 0 - ns re high to we low t rhw 100 - ns we high to re low t whr 60 - ns read - 5 us program - 10 us erase - 500 us device resetting time during ... ready t rst - 5 (1) us cache busy in read cache (following 31h and 3fh) t dcbsyr - 30 us note : 1. if reset command (ffh) is written at ready stat e, the device goes into busy for maximum 5us. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 11/54 nand flash technical notes mask out initial invalid block(s) initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by esmt. the information regarding the initial invalid block(s) is called the initial invalid block information. devices with initial invali d block(s) have the same quality level as devices with all valid blocks and have the same ac and dc characteristics. an initial invalid block(s) do es not affect the performance of valid block(s) bec ause it is isolated from the bit line and the common source line by a select transi stor. the system design must be able to mask out the init ial invalid block(s) via address mapping. the 1st block, which is placed on 00h block a ddress, is guaranteed to be a valid block up to 1k program/erase cycles with 4bit/ 512byte (4bit/256word) ecc. identifying initial invalid block(s) and block replacement management all device locations are erased (ffh) except locations where the initial invalid block(s) information is written prior to shipp ing. the initial invalid block(s) status is defined by the 1st byte in the spare area. esmt makes sure that either the 1st or 2nd page of every initial invalid block has non-ffh data at the 1st by te column address in the spare area. do not erase or program factory-marked bad blocks. the host controller must be able to recognize the initial invalid block info rmation and to create a corresponding table to manage block replacement upon erase or program error when additional invalid blocks deve lop with flash memory usage. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 12/54 for (i=0; i esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 14/54 erase flow chart read flow chart esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 15/54 block replacement addressing for program operation within a block, the pages must be programm ed consecutively from the lsb (least signifi cant bit) page of the block to msb (most significant bit) pages of the block. ran dom page address programming is prohibited. in this case, the definition of lsb page is the lsb among the pages to be programmed. therefor e, lsb page doesn?t need to be page 0. (64) (32) (3) (2) (1) : : page 63 page 31 page 2 page 1 page 0 data register from the lsb page to msb page d a t a in: data (1) data (64) (64) (1) (3) (32) (2) : : page 63 page 31 page 2 page 1 page 0 data register ex.) random page program (prohibition) d a t a in: data ( 1 ) data ( 64 ) esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 16/54 system interface using ce don?t care for an easier system interface, ce may be inactive during the data-loading or serial access as shown below. the internal 2,112byte (1,056word) data registers are utilized as separate buffers for this operation and the system design gets more flexible. in add ition, for voice or audio applications that use slow cycl e time on the order of u-seconds, de-activating ce during the data-loading and serial access would provide significant savings in power consumption. program/read operation with ? ce not-care? address information i/o data address device i/ox data in / out col. add1 col. add2 row add1 row add2 row add3 F59D4G81A (x8) i/o0~7 2,112 byte a0 ~ a7 a8 ~ a11 a12 ~ a19 a20 ~ a27 a28 ~ a29 f59d4g161a (x16) i/o0~15 1,056 byte a0 ~ a7 a8 ~ a10 a11 ~ a18 a19 ~ a26 a27 ~ a28 esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 17/54 timing diagrams command latch cycle address latch cycle esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 18/54 input data latch cycle serial access cycle after read (cle = l, ale = l, we = h) note : 1. dout transition is measur ed at 200mv from steady stat e voltage at i/o with load. 2. t rhoh starts to be valid when frequency is lower than 20mhz. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 19/54 serial access cycle after read (edo type cle = l, ale = l, we = h) note : 1. transition is measured at 200mv fr om steady state voltage with load. this parameter is sample and not 100% tested. (t chz , t rhz ) 2. t rloh is valid when frequency is higher than 20mhz. t rhoh starts to be valid when frequency is lower than 20mhz. status read cycle esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 20/54 read operation (read one page) read operation (intercepted by ce ) esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 21/54 random data output in a page page program operation note : t adl is the time from the we rising edge of final address cycle to the we rising edge of the first data cycle. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 22/54 page program operation with random data input note: t adl is the time from the we rising edge of final address cycle to the we rising edge of the first data cycle. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 23/54 copy-back operation with random data input cache program operation esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 24/54 cache read operation esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 25/54 block erase operation read id operation esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 26/54 two-plane page read operation with two-plane random data out esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 27/54 two-plane cache read operation note: 1. the column address will be reset to 0 by the 3fh command input. 2. cache read operation is av ailable only within a block. 3. make sure to terminate the operati on with 3fh command. if the operation is terminated by 31h command, monitor i/o6 (ready/busy) by issuing status read command (70h) and make sure the previous page read operation is completed. if the page read operation is completed, issue ffh reset before next operation. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 28/54 two-plane page program operation esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 29/54 two-plane cache program operation esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 30/54 two-plane block erase operation esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 31/54 id definition table id access command = 90h product id 1 st cycle (maker code) 2 nd cycle (device code) 3 rd cycle 4 th cycle 5 th cycle F59D4G81A (x8) c8h ach 90h 15h 54h f59d4g161a (x16) c8h bch 90h 55h 54h description 1 st byte maker code 2 nd byte device code 3 rd byte internal chip number, cell type, etc 4 th byte page size, block size, etc 5 th byte plane number, plane size, ecc level 3rd id data description i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 i/o0 1 0 0 2 0 1 4 1 0 internal chip number 8 1 1 2 level cell 0 0 4 level cell 0 1 8 level cell 1 0 cell type 16 level cell 1 1 1 0 0 2 0 1 4 1 0 number of simultaneously programmed page 8 1 1 not support 0 interleave program between multiple chips support 1 not support 0 cache program support 1 4th id data description i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 i/o0 1kb 0 0 2kb 0 1 4kb 1 0 page size (w/o redundant area) 8kb 1 1 8 0 redundant area size (byte/512byte) 16 1 64kb 0 0 128kb 0 1 256kb 1 0 block size (w/o redundant area) 512kb 1 1 x8 0 organization x16 1 45ns 0 0 reserved 0 1 reserved 1 0 serial access time reserved 1 1 esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 32/54 5th id data description i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 i/o0 1 0 0 2 0 1 4 1 0 plane number 8 1 1 64mb 0 0 0 128mb 0 0 1 256mb 0 1 0 512mb 0 1 1 1gb 1 0 0 2gb 1 0 1 4gb 1 1 0 plane size (w/o redundant area) 8gb 1 1 1 reserved reserved 0 0 0 esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 33/54 device operation page read upon initial device power up, the device def aults to read mode. this operation is also initiated by writing 00h command, five-c ycle address, and 30h command. after initial power up, the 00h comm and can be skipped because it has been latched in the command register. the 2,112byte (1,056wo rd) of data on a page are transferred to cache registers via data registers within 25us (t r ). host controller can detect the completion of this data transfer by checking the r/ b output. once data in the selected page have been loaded into cache registers, each byte can be read out in 45ns cycle time by continuously pulsing re . the repetitive high-to-low transitions of re clock signal make the device output data starting from t he designated column address to the last column address. the device can output data at a random colu mn address instead of sequential column addr ess by using the random data output command. random data output command can be executed multiple times in a page. after power up, device is in read mode so 00h command cycle is not necessary to start a read operation. a page read sequence is illustrated in the following figure, where column address, page address are placed in between commands 00h and 30h. after t r read time, the r/ b de-asserts to ready state. read status comm and (70h) can be issued right after 30h. host controller can toggle re to access data starting with the designated column address and their successive bytes. read operation esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 34/54 random data output in a page esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 35/54 page program the device is programmed based on the unit of a page, and consecutive partial page programming on one page without intervening erase operation is strictly prohib ited. addressing of page program operations with in a block should be in sequential order. a c omplete page program cycle consists of a serial dat a input cycle in which up to 2,112byte (1,0 56word) of data can be loaded into data r egister via cache register, followed by a programming period during whic h the loaded data are programmed into the designated memory cel ls. the serial data input cycle begins with the serial data inpu t command (80h), followed by a five-cycle address input and then se rial data loading. the bytes not to be programmed on the page do not need to be loaded. the column address for the next data can be chang ed to the address follows random data input command (85h). random data input command may be repeated multiple times in a page. the page program confirm command (10h) starts the programming pr ocess. writing 10h alone withou t entering data will not initiat e the programming process. the internal write engine automatically executes the corresponding al gorithm and controls timing for programming and verification, thereby free ing the host controller for other tasks. once the program process starts, the host co ntroller can detect the completion of a program cycle by monitoring the r/ b output or reading the status bi t (i/o6) using the read status command. only read status and reset commands are valid during programming. when the page progr am operation is completed, the host controller can check t he status bit (i/o0) to see if the page program operation is successfully done. the command regi ster remains the read status mode unless another valid command is written to it. a page program sequence is illustrated in following figure, wher e column address, page address, and data input are placed in be tween 80h and 10h. after t prog program time, the r/ b de-asserts to ready state. read status command (70h) can be issued right after 10h. program & read status operation random data input in a page esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 36/54 cache program cache program is an extension of page program, which is executed with 2,112 byte (x8) or 1,056 bytes (x16) data registers, and is available only within a block. since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed into memory cell. after writing the first set of data up to 2,112 bytes (x8) or 1, 056 bytes (x16) into the selected cache registers, cache progra m command (15h) instead of actual page program (10h) is inputted to make cache registers free and to start internal program operation. to transfer data from cache registers to data regi sters, the device remains in busy state for a short period of time (t cbsy ) and has its cache registers ready for the next data-input while the internal progra mming gets started with the data loaded into data registers. r ead status command (70h) may be issued to find out when cache registers becom e ready by polling the cache-busy status bit (i/o6). pass/fai l status of only the previ ous page is available upon the return to ready state. when the next set of dat a is inputted with the ca che program command, t cbsy is affected by the progress of pending internal pr ogramming. the programming of the cache registers is initiated only when the pending program cycle is finished and t he data registers are available for the transfer of data from ca che registers. the status bit (i/o5) for inter nal ready/busy may be polled to identity the completion of internal programming. if t he system monitors the progress of programming only with r/ b , the last page of the ta rget programming sequence must be programmed with actual page program command (10h). cache program (available only within a block) note: 1. since programming the last page does not employ caching, the program time has to be that of page program. however, if the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after completion of the previous cycle, which can be expressed as the following formula. 2. t prog = program time for the last page + program time for the (l ast-1)th page ? (program command cycle time + last page data loading time) esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 37/54 copy-back program copy-back program is designed to efficiently copy data stored in memory cells without time-consuming data reloading when there is no bit error detected in the stored data. t he benefit is particularly obvious when a po rtion of a block is updated and the rest of the block needs to be copied to a newly assigned empty block. copy-back o peration is a sequential execution of read for copy-back and of copy-back program with destination address. a read for copy-b ack operation with ?35h? command and the source address moves the whole 2,112byte (1,056word) data into the internal buffer. t he host controller can detect bit errors by sequentially readin g the data output. copy-back program is initiated by issuing page-copy da ta-input command (85h) with dest ination address. if data modifica tion is necessary to correct bit errors and to avoid error propagati on, data can be reloaded after the destination address. data mod ification can be repeated multiple times as shown in the following figur e. actual programming operation begins when program confirm command (10h) is issued. once the program process starts, t he read status command (70h) may be entered to read the status register. the host controller can detect the co mpletion of a program cycle by monitoring the r/ b output, or the status bit (i/o6) of the status register. when the copy-back program is complete, the st atus bit (i/o0) may be checked. the command register remains read status mode until another valid command is written to it. page copy-back program operation page copy-back program operation with random data input esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 38/54 block erase the block-based erase operation is initiated by an erase setup command (60h), followed by a three-cycle row address, in which o nly plane address and block address are valid while page address is ignored. the erase confirm command (d0h) following the row address starts the internal erasing process. the two-step comma nd sequence is designed to prevent memory content from being inadvertently changed by external noise. at the rising edge of we after the erase confirm command input, the internal c ontrol logic handles erase and erase-verify. when the erase operation is completed, the host contro ller can check status bit (i/o0) to see if the erase operation is successfully don e. the following figure illustrates a block erase sequence, and the addr ess input (the first page address of the selected block) is pl aced in between commands 60h and d0h. after t bers erase time, the r/ b de-asserts to ready state. r ead status command (70h) can be issued right after d0h to check the ex ecution status of erase operation. block erase operation read status a status register on the device is used to check whether program or erase operation is completed and whether the operation is completed successfully. after writing 70h command to the command register, a read cycle outputs t he content of t he status regis ter to i/o pins on the falling edge of ce or re , whichever occurs last. these two commands al low the system to poll the progress of each device in multiple memory connections even when r/ b pins are common-wired. re or ce does not need to toggle for status change. read status command 70h is used to retrieve operating status of commands like page read, page pr ogram and block erase. similarl y, read status two-plane command f1h is used to retr ieve operating status of two-plane commands. the command register remains in read status mode unless other commands are issued to it. t herefore, if the stat us register is r ead during a random read cycle, a read command (00h) is needed to start read cycles. status register definition for 70h command i/o page program block erase cache program read cache read definition i/o0 pass / fail pass / fail pass / fail (n) na na pass: ?0? fail: ?1? i/o1 na na pass / fail (n-1) na na pass: ?0? fail: ?1? i/o2 na na na na na don?t cared i/o3 na na na na na don?t cared i/o4 na na na na na don?t cared i/o5 na na true ready / busy na true ready / busy busy: ?0? ready: ?1? i/o6 ready / busy ready / busy ready / busy ready / busy ready / busy busy: ?0? ready: ?1? i/o7 write protect write protect write protect write protect write protect protected: ?0? not protected: ?1? esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 39/54 status register definition for f1h command i/o page program block erase cache program read cache read definition i/o0 chip pass / fail chip pass / fail chip pass / fail (n) na na pass: ?0? fail: ?1? i/o1 plane0 pass / fail plane0 pass / fail plane0 pass / fail (n) na na pass: ?0? fail: ?1? i/o2 plane1 pass / fail plane1 pass / fail plane1 pass / fail (n) na na pass: ?0? fail: ?1? i/o3 na na plane0 pass / fail (n-1) na na pass: ?0? fail: ?1? i/o4 na na plane1 pass / fail (n-1) na na pass: ?0? fail: ?1? i/o5 na na true ready / busy na true ready / busy busy: ?0? ready: ?1? i/o6 ready / busy ready / busy ready / busy ready / busy ready / busy busy: ?0? ready: ?1? i/o7 write protect write protect write protect write protect write protect protected: ?0? not protected: ?1? note: 1. i/os defined na are recommended to be masked out when read status is being executed. 2. n : current page, n-1 : previous page. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 40/54 read id the device contains a product identification mode, initiated by writing 90h to the command register, followed by an address inp ut of 00h. four read cycles sequentially output the manufacturer code (c8h), and t he device code and 3rd, 4th, 5th cycle id respectively. the command register remains in read id mode until further commands are issued to it. read id operation id definition table product id 1 st cycle (maker code) 2 nd cycle (device code) 3 rd cycle 4 th cycle 5 th cycle F59D4G81A (x8) c8h ach 90h 15h 54h f59d4g161a (x16) c8h bch 90h 55h 54h reset the device offers a reset feature, executed by writing ffh to the command register. when the device is in busy state during ran dom read, program or erase mode, the reset operat ion will abort these operations. the conten ts of memory cells being altered are no longer valid, as the data will be partially programmed or erased. the command register is cleared to wait for the next command, and th e status register is cleared to value c0h when wp is high. if the device is already in reset state a new reset command will be accepted by the command register. the r/ b pin changes to low for t rst after the reset command is written. refer to the following figure. device status after power-up after reset operation mode 00h command is latched waiting for next command esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 41/54 cache read cache read is an extension of page read, and is available only within a block. the normal page read command (00h-30h) is always issued before invoking cache read. after issuing the cache read command (31h), read data of the designated page (page n) are transferred from data registers to cache registers in a short time period of t dcbsyr , and then data of the next page (page n+1) is transferred to data registers whil e the data in the cache regist ers are being read out. host controller can retrieve continuous data and achieve fast read performance by iterating cache read operation. the read start for las t page cache read command (3fh) is used to complete data transfer from me mory cells to data registers. read operation with cache read esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 42/54 two-plane page program two-plane page program is an extension of page program, and which utilizes the two sets of 2,112b yte (1,056word) data registers to enable simultaneous programming of same page of same block from each plane. after writing the first set of data (up to 2,112 bytes (1,056 wo rds)) into the selected data registers, dummy page program comm and (11h) instead of page program command (10h) is input to finish data loading for the first memory plane. r/ b remains in busy state for a short period of time (t dbsy ). read status (70h) may be issued to find out when t he device returns to ready state by polling the status bit i/o6. the second set of data for the other memory plane is loaded after the 81h command and ad dress sequence. after that, t he page program command (10h) must be issued to start the programming process. refe r to page program command for the operation of r/ b and read status. the status bit i/o0 is set to ?1? when either page fails. the following figure shows the restriction in addressing with two-plane page program. read command sequence of two-plane page program note: any command between 11h and 81h is prohibited except 70h/f1h and ffh. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 43/54 two-plane page read the two-plane page read sequence and its restrictions are shown in the following figure. two-plane page read is initiated by repeating command 60h followed the three address cycles twice, and only same page of same block can be selected from each plane . once the data is loaded into the cache r egisters, the data output of the first plane can be read out by issuing command 00h wit h five address cycles, command 05h with two-cycle column address and fina lly e0h. the data out put of the second plane can be read out using the identical command sequence. two-plane read command can only must be used in a block which has been programmed with two-plane page program operation. two-plane block erase similar to two-plane page program, two symmetric blocks from each plane can be simultaneously erased by using two-plane block erase command. following figure illustrates the two-plane block erase sequence. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 44/54 two-plane cache read the two-plane cache read sequence is shown in below, only same page of same block can be selected from each plane. after read confirm command (33h), the data are trans ferred to data registers within t r . after issuing cache read command (31h), read data in the data registers are transferred to cache regi sters within a short period of time (t dcbsyr ). once the data are loaded into the cache registers, the data of both pla nes can be read out in the same way as the two- plane page read operation. the host controller sh all use 3fh instead of 31h to indicate the two-plane cache read operation for the last target pages. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 45/54 two-plane copy-back program note: 1. copy back program operation is allowed only within the same memory plane. 2. any command between 11h and 81h is prohibited except 70h/f1h and ffh. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 46/54 two-plane copy-back program with random data input note: 1. copy back program operation is allowed only within the same memory plane. 2. any command between 11h and 81h is prohibited except 70h/f1h and ffh. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 47/54 two-plane cache program operation note: any command between 11h and 81h is prohibited except 70h/f1h and ffh. esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 48/54 ready / busy the device has a r/ b output that provides a hardware method of indicating the completion of a page program, erase and random read completion. the r/ b pin is normally high but transition to low after program or erase command is written to the command register or random read is started after address loading. it re turns to high when the internal controller has finished the oper ation. the pin is an open-drain driver thereby allowing two or more r/ b outputs to be or-tied. because pull-up re sistor value is related to tr (r/ b ) and current drain during busy (ibusy), an appropriate value can be obtained with the following reference chart (the following f igure). its value can be determined by the following guidance. read / busy pin electrical specifications esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 49/54 data protection & power up sequence the timing sequence shown in the following figure is necessary for the power-on/off sequence. the device internal initialization starts after the power supply reaches an appropriate level in the power on sequence. during the initialization the device r/ b signal indicates the busy state as shown in the foll owing figure. in this time period, the acceptable commands are 70h. the wp signal is useful for protecting ag ainst data corruption at power on/off. ac waveforms for power transition esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 50/54 write protect operation enabling wp during erase and program busy is prohi bited. the erase and progr am operations are enabled and disabled as follows: enable programming disable programming esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 51/54 enable erasing disable erasing esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 52/54 packing dimension 48-lead tsop(i) ( 12x20 mm ) dimension in mm dimension in inch dimension in mm dimension in inch symbol min norm max min norm max symbol min norm max min norm max a ------- ---- --- 1.20 ------- -- ----- 0.047 d 20.00 bsc 0.787 bsc a 1 0.05 ------- 0.15 0.006 ------- 0.002 d 1 18.40 bsc 0.724 bsc a 2 0.95 1.00 1.05 0.037 0.039 0. 041 e 12.00 bsc 0.472 bsc b 0.17 0.22 0.27 0.007 0.009 0.011 e 0.50 bsc 0.020 bsc b1 0.17 0.20 0.23 0.007 0.008 0.009 l 0.50 0.60 0.70 0.020 0.024 0.028 c 0.10 ------- 0.21 0.004 ------- 0.008 0 o ------- 8 o 0 o ------- 8 o c1 0.10 ------- 0. 16 0.004 ------- 0.006 esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 53/54 revision history revision date description 0.1 2012.10.05 original 1.0 2012.11.22 1. delete "preliminary" 2. correct the description of identifying initial invalid block(s) 1.1 2013.05.30 1. add bad-bloack-protect 2. modify the description of identifying initial invalid block(s) and block replacement management 3. add plane address 1.2 2014.02.25 modify t he specification of t prog and t bers (typ.) 1.3 2014.03.14 add f59d4g161a product 1.4 2014.05.23 modify the description of identifying initial invalid block(s) and block replacement management esmt F59D4G81A / f59d4g161a elite semiconductor memory technology inc. publication date: may 2014 revision: 1.4 54/54 important notice all rights reserved. no part of this document may be reproduced or duplicated in any form or by any means without the prior permission of esmt. the contents contained in this docum ent are believed to be accurate at the time of publication. esmt assu mes no responsibilit y for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is presented only as a guide or examples for the application of o ur products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellectual property rights of third part ies which may result from its use. no license, either express , implied or otherwise, is granted under any patents, copyrights or other inte llectual property rights of esmt or others. any semiconductor devices may have i nherently a certain rate of failure. to minimize risks associated with customer's application, adequate design and operating safeguards agains t injury, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for us e in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of applicatio n, purchaser must do its own quality assurance testing appropriate to such applications. |
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